Thermal assisted contactless photoelectrochemical (PEC) etching for GaN

FUMIMASA HORIKIRI; Noboru Fukuhara; Hiroshi Ohta; Naomi Asai; Yoshinobu Narita; Takehiro Yoshida; Tomoyoshi Mishima; Masachika Toguchi; Kazuki Miwa; Hiroki Ogami; Taketomo Sato

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Masashi Kato(Nagoya Inst. of Tech.)

2:30 PM - 2:45 PM

[12p-B401-6] Thermal assisted contactless photoelectrochemical (PEC) etching for GaN

〇FUMIMASA HORIKIRI¹, Noboru Fukuhara¹, Hiroshi Ohta², Naomi Asai², Yoshinobu Narita¹, Takehiro Yoshida¹, Tomoyoshi Mishima², Masachika Toguchi³, Kazuki Miwa³, Hiroki Ogami³, Taketomo Sato³ (1.SCIOCS, 2.Hosei Univ., 3.Hokkaido Univ.)

Keywords:GaN, Photoelectrochemical, Etching

This paper describes that advanced contactless photoelectrochemical (PEC) etching technology of GaN. The thermal generated sulfate radicals from S₂O₈^2- ions much enhanced the etching rate.