[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

[12p-B401-8] Mapping of contactless photo-electrochemical etched Ni/n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, scanning internal photoemission microscopy, photo-electrochemical etching

We present the experimental results on mapping characterization of selectively contactless photo-electrochemical etched n-type GaN surfaces by using scanning internal photoemission microscopy. The Schottkey barrier height increased as the etching area increasedThe photocurrent increased by 200 % in the photo-electrochemical etched region. We confirmed that this method can clearly visualize the etching pattern as the photocurrent image.