[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

[12p-B401-9] Self-aligned contact formation by continuous growth of n⁺-GaN and metal

Nao Ogasawara¹, Masahiro Yoshimoto¹, 〇Kazuki Kodama², Daisuke Ueda² (1.Kyoto Inst. of Tech., 2.Nagoya Univ.)

Keywords:pico-second laser PLD, Self-aligned process, GaN

GaN power devices has been extensively studied as low-loss and high-voltage power conversion devices. In particular, it is expected that a decrease in contact resistance strongly reduces on-resistance for middle and low voltage GaN power devices. So far, we reported high-concentration n+-GaN regrowth (4×10²⁰ cm^-3) enables to form non-alloy ohmic electrodes by using picosecond laser PLD method. In this work, we studied self-aligned contact formation by continuous growth of n+-GaN and metal. The process without mask-alignment was developed using Lift-off process with Si/SiO2 insulators.