The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-D215-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 12, 2020 2:00 PM - 5:30 PM D215 (11-215)

Toshiyuki Kaizu(Kobe Univ.), Jun Tatebayashi(Osaka Univ.), Ryo Nakao(NTT)

2:15 PM - 2:30 PM

△ [12p-D215-2] In-situ X-ray diffraction study of two-step GaAs growth on Si

〇Kizuku Kawaguchi1, Yu-Cian Wang1, Nobuaki Kojima1, Yoshio Ohshita1, Takuo Sasaki2 (1.Toyota Technological Institute, 2.QST)

Keywords:semiconductor, GaAs/Si