Enhanced Photoluminescence Efficiency in GaInN Green Light-emitting Diodes by n-GaN Surface Etching.

Ryoto Fujiki; Dong-Pyo Han; Seiji Ishimoto; Ryoya Mano; Yusuke Ueshima; Ryo Takahashi; Shintaro Ueda; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-A302-1~11] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2020 9:00 AM - 12:00 PM A302 (6-302)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.)

9:00 AM - 9:15 AM

△ [13a-A302-1] Enhanced Photoluminescence Efficiency in GaInN Green Light-emitting Diodes by n-GaN Surface Etching.

〇(B)Ryoto Fujiki¹, Dong-Pyo Han¹, Seiji Ishimoto¹, Ryoya Mano¹, Yusuke Ueshima¹, Ryo Takahashi¹, Shintaro Ueda¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo univ., 2.ARC,Nagoya univ.)

Keywords:semiconductor

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