[13a-A302-1~11] 15.4 III-V-group nitride crystals

[13a-A302-3] InGaN-based Red LEDs (I) Effect of in-plane residual stress

Daisuke Iida¹, Zhe Zhuang¹, Pavel Kirilenko¹, Martin Velazquez-Rizo¹, 〇Kazuhiro Ohkawa¹ (1.KAUST)

Keywords:red LEDs, InGaN, in-plane stress

We have developed InGaN-based red LEDs with different thickness of GaN underlying layers. The EL wavelength was alined at 635 nm at 20 mA by tuning the InGaN quantum wells. The biaxial compress stress decreases with the thickness of the GaN underlying layer and has realized higher output power. Our InGaN red LEDs showed light output of 0.64 mW, EQE 1.6%, and WPE 1.0% at 20 mA under 3.3 V bias.