[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

△ [13a-B401-10] Evolution of defect in Mg ions-implanted GaN upon high temperature and ultrahigh N₂ pressure annealing: Transmission electron microscopy analysis

〇(B)Takuya Nakashima¹, Hideki Sakurai^1,2,3, Sigeo Arai², Kenji Iwata¹, Tetsuo Narita⁴, Keita Kataoka⁴, Michal Bockowski^2,5, Masahiro Nagao², Jun Suda¹, Tetsu Kachi², Nobuyuki Ikarashi² (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.ULVAC ISET, 4.Toyota Central R&D Labs., 5.Unipress)

Keywords:electron microscope, GaN