[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

△ [13a-B401-4] Unusual Fixed-Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Sanshiro Kaga¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:GaN, MOS, semiconductor

We previously reported that a flat-band voltage (V_FB) of SiO₂/GaN MOS structures with forming gas annealing (FGA) shifted significantly to the negative bias voltage as compared with the V_FB without FGA. However, the physical origin of the V_FB shift was unknown. In this study, we evaluated the fixed-charge distribution in GaN MOS structures with FGA, and also examined the effect of post-metallization annealing in air on them.