[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

△ [13a-B401-5] Impacts of gate electrode formation process on interface properties of Al₂O₃/GaN gate stack structure

〇Yuto Ando^1,6, Tohru Nakamura², Manato Deki², Noriyuki Taoka¹, Hirotaka Watanabe², Atsushi Tanaka^2,3, Shugo Nitta², Yoshio Honda², Hisashi Yamada⁶, Mitsuaki Shimizu^2,6, Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.AIST GaN-OIL)

Keywords:GaN, interface state, EB evaporation

Improvement of mobility in MIS channel is needed for GaN for the purpose of power application. We have reported that deposition process of gate electrode can affect the interface properties of Al₂O₃/GaN. In this study, we investigated the impact of electron-beam evaporation to the MIS gate stack.