[13p-A201-1~9] Current topics and future prospects of amorphous materials and their device applications

[13p-A201-5] Electrochemical reaction between Ag and GeSbTe thin films – from nanostructure formation to device applications –

〇Toshihiro Nakaoka¹, Tatsuya Watanabe¹, Hyoseong Park¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³ (1.Sophia Univ., 2.Tokyo Tech., 3.JAXA)

Keywords:chalcogenide, amorphous thin film, radiation sensor

Diffusion of metal ions via electrochemical reaction in amorphous chalcogenides has been intensively studied from views of both fundamental physics and device applications. We have recently demonstrated diffusion of Ag ions in thin films of Ge-Sb-Te alloys that have been widely employed in Blu-ray disks. In this paper, we report the electrochemical diffusion, nanostructure fabrication based on the electrochemical reaction, and studies toward applications of RF frequency multipliers and radiation sensors.