Symposium (Oral)

[13p-A201-1~9] Current topics and future prospects of amorphous materials and their device applications

Fri. Mar 13, 2020 1:30 PM - 5:30 PM A201 (6-201)

Koichi Kajihara(Tokyo Metropolitan Univ.), Tsuyoshi Honma(Nagaoka Univ. of Tech.), Norimitsu Yoshida(Gifu Univ.), Yuta Saito(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[13p-A201-1] Systematic Materials Design for Phase-Change Memory and Recent Development of Tellurides

〇Yuta Saito¹ (1.AIST NeRI)

2:00 PM - 2:30 PM

[13p-A201-2] [Highlight]Development of phase change material for PCRAM with low operation energy

〇Yuji Sutou¹, Shogo Hatayama¹ (1.Tohoku Univ.)

2:30 PM - 2:45 PM

△ [13p-A201-3] Understanding local structure of Cr₂Ge₂Te₆ phase change material for non-volatile memory application

〇Shogo Hatayama¹, Yi Shuang¹, Paul Fons^2,3, Yuta Saito², Alexander Kolobov^2,4, Keisuke Kobayashi⁵, Satoshi Shindo¹, Daisuke Ando¹, Yuji Sutou¹ (1.Tohoku Univ., 2.AIST, 3.JASRI, 4.Herzen State Pedagogical Univ., 5.Kochi Univ.)

2:45 PM - 3:15 PM

[13p-A201-4] Gap states and carrier properties in Ge₂Sb₂Te₅ films

〇Tamihiro Gotoh¹ (1.Gunma Univ.)

3:15 PM - 3:45 PM

[13p-A201-5] Electrochemical reaction between Ag and GeSbTe thin films – from nanostructure formation to device applications –

〇Toshihiro Nakaoka¹, Tatsuya Watanabe¹, Hyoseong Park¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³ (1.Sophia Univ., 2.Tokyo Tech., 3.JAXA)

4:00 PM - 4:30 PM

[13p-A201-6] Development of amorphous solid electrolytes for all-solid-state batteries

〇Akitoshi Hayashi¹ (1.Osaka Prefecture Univ.)

4:30 PM - 4:45 PM

[13p-A201-7] Synthesis and characterization of glass-ceramics of a new lithium-ion-conducting boracite with substituted boron sites Li₄B₄M₃O₁₂Cl (M = Al, Ga)

〇Koichi Kajihara¹, Naoto Tezuka¹, Mayu Saito¹, Mao Shoji¹, Jungo Wakasugi¹, Hirokazu Munakata¹, Kiyoshi Kanamura¹ (1.TMU)

4:45 PM - 5:00 PM

[13p-A201-8] Crystallization of Na₂MgP₂O₇-Na₂FeP₂O₇ pseudo-binary glass

〇Tsuyoshi Honma¹, Souma Iino¹, Takayuki Komatsu¹ (1.Nagaoka Univ. Tech.)

5:00 PM - 5:30 PM

[13p-A201-9] All-Solid-State Na ion battery fabricated with the glass ceramic cathode

〇Hideo Yamauchi¹ (1.Nippon Electric Glass)

Sessions

Symposium » Current topics and future prospects of amorphous materials and their device applications

[13p-A201-1~9] Current topics and future prospects of amorphous materials and their device applications

[13p-A201-1] Systematic Materials Design for Phase-Change Memory and Recent Development of Tellurides

[13p-A201-2] [Highlight]Development of phase change material for PCRAM with low operation energy

△ [13p-A201-3] Understanding local structure of Cr₂Ge₂Te₆ phase change material for non-volatile memory application

[13p-A201-4] Gap states and carrier properties in Ge₂Sb₂Te₅ films

[13p-A201-5] Electrochemical reaction between Ag and GeSbTe thin films – from nanostructure formation to device applications –

[13p-A201-6] Development of amorphous solid electrolytes for all-solid-state batteries

[13p-A201-7] Synthesis and characterization of glass-ceramics of a new lithium-ion-conducting boracite with substituted boron sites Li₄B₄M₃O₁₂Cl (M = Al, Ga)

[13p-A201-8] Crystallization of Na₂MgP₂O₇-Na₂FeP₂O₇ pseudo-binary glass

[13p-A201-9] All-Solid-State Na ion battery fabricated with the glass ceramic cathode

Authentication

Sessions

Symposium » Current topics and future prospects of amorphous materials and their device applications

[13p-A201-1~9] Current topics and future prospects of amorphous materials and their device applications

△ [13p-A201-3] Understanding local structure of Cr2Ge2Te6 phase change material for non-volatile memory application

Authentication

△ [13p-A201-3] Understanding local structure of Cr₂Ge₂Te₆ phase change material for non-volatile memory application