[13p-A301-1~7] Frontier of Nonvolatile Memory technologies - Spintronic, Phase-change, Resistive and Ferroelectric-

[13p-A301-6] New spintronics Memories, SOT-MRAM, VoCSM, Beyond STT-MRAM and their application for In-memory computing

〇Hiroaki Yoda¹, Yuichi Ohsawa², Yushi Kato², Tomomi Yoda² (1.YODA-S, Inc., 2.SOT-I, Inc.)

Keywords:MRAM, SOT, VCMA

Development of STT-MRAMs become very active these days. However, L2 level cache memory application requires both speed and unlimited endurance and STT-MRAMs have to solve reliability issues that seems very difficult. Moreover, since AI application demands ultra-low energy consumption for memories, the technology hurdle becomes much tougher. In order to solve these issues, we have proposed a new memory hierarchy using SOT-MRAM(Spin Orbit Torque) and VoCSM. In this talk, low energy consumption and unlimited endurance of SOT-MRAM is reviewed first. Second, in-memory computing using VoCSM is discussed regarding the two big issues of AI application, ultra-low energy consumption and data transfer band-width.