Symposium (Oral)

[13p-A301-1~7] Frontier of Nonvolatile Memory technologies - Spintronic, Phase-change, Resistive and Ferroelectric-

Fri. Mar 13, 2020 1:30 PM - 5:15 PM A301 (6-301)

Satoshi Iba(AIST), Hiromi Yuasa(Kyushu univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[13p-A301-1] MRAM’s Journey from Specialty to Mainstream Memory

〇Sumio Ikegawa¹, Frederick B. Mancoff¹, Jason Janesky¹, Sanjeev Aggarwal¹ (1.Everspin Technologies, Inc.)

2:00 PM - 2:30 PM

[13p-A301-2] Device technology of ReRAM and its expansion to next-generation applications

〇Satoshi AWAMURA¹ (1.PSCS)

2:30 PM - 3:00 PM

[13p-A301-3] Technology Development and Productization of STT-MRAM

〇Masanori Hosomi¹ (1.Sony Semiconductor)

3:00 PM - 3:30 PM

[13p-A301-4] Neuromorphic Computing with FeFET Memory Devices

〇Ken Takeuchi¹ (1.Chuo Univ.)

3:45 PM - 4:15 PM

[13p-A301-5] Phase Change Memory World
-from crystal-amorphous phase-transition to topological spin application-

〇Junji Tominaga¹ (1.AIST)

4:15 PM - 4:45 PM

[13p-A301-6] New spintronics Memories, SOT-MRAM, VoCSM, Beyond STT-MRAM and their application for In-memory computing

〇Hiroaki Yoda¹, Yuichi Ohsawa², Yushi Kato², Tomomi Yoda² (1.YODA-S, Inc., 2.SOT-I, Inc.)

4:45 PM - 5:15 PM

[13p-A301-7] Write properties of Spin Current Type Magnetic memory with Spin Orbit Torque

〇Yohei Shiokawa¹, Eiji Komua¹, Yugo Ishitani¹, Atsushi Tsumita¹, Keita Suda¹, Yuji Kakinuma¹, Yukio Terasaki¹, Tomoyuki Sasaki¹ (1.TDK)

Sessions

Symposium » Frontier of Nonvolatile Memory technologies - Spintronic, Phase-change, Resistive and Ferroelectric-

[13p-A301-1~7] Frontier of Nonvolatile Memory technologies - Spintronic, Phase-change, Resistive and Ferroelectric-

[13p-A301-1] MRAM’s Journey from Specialty to Mainstream Memory

[13p-A301-2] Device technology of ReRAM and its expansion to next-generation applications

[13p-A301-3] Technology Development and Productization of STT-MRAM

[13p-A301-4] Neuromorphic Computing with FeFET Memory Devices

[13p-A301-5] Phase Change Memory World
-from crystal-amorphous phase-transition to topological spin application-

[13p-A301-6] New spintronics Memories, SOT-MRAM, VoCSM, Beyond STT-MRAM and their application for In-memory computing

[13p-A301-7] Write properties of Spin Current Type Magnetic memory with Spin Orbit Torque

Authentication

Sessions

Symposium » Frontier of Nonvolatile Memory technologies - Spintronic, Phase-change, Resistive and Ferroelectric-

[13p-A301-1~7] Frontier of Nonvolatile Memory technologies - Spintronic, Phase-change, Resistive and Ferroelectric-

[13p-A301-1] MRAM’s Journey from Specialty to Mainstream Memory

[13p-A301-2] Device technology of ReRAM and its expansion to next-generation applications

[13p-A301-3] Technology Development and Productization of STT-MRAM

[13p-A301-4] Neuromorphic Computing with FeFET Memory Devices

[13p-A301-5] Phase Change Memory World-from crystal-amorphous phase-transition to topological spin application-

[13p-A301-6] New spintronics Memories, SOT-MRAM, VoCSM, Beyond STT-MRAM and their application for In-memory computing

[13p-A301-7] Write properties of Spin Current Type Magnetic memory with Spin Orbit Torque

Authentication

[13p-A301-5] Phase Change Memory World
-from crystal-amorphous phase-transition to topological spin application-