[13p-A302-1~10] 15.4 III-V-group nitride crystals

△ [13p-A302-4] Investigation of morphology and current leakage properties for individual threading dislocations in a HVPE-GaN bulk single crystal grown on a Na-flux-GaN crystal

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

Keywords:Gallium Nitride, Threading dislocation, Leakage current