[13p-A302-1~10] 15.4 III-V-group nitride crystals

[13p-A302-3] 1-D hopping conduction model for the leakage current on the threading dislocation in p-n diodes

〇Yosuke Harashima¹, Takashi Nakano², Atsushi Oshiyama¹, Kenji Shiraishi^1,2 (1.IMaSS, Nagoya Univ., 2.Grad. Sch. Engineering, Nagoya Univ.)

Keywords:Gallium Nitride, leakage current, dislocation

The microscopic mechanism for the generation of the leakage current is an important issue for the reliavility of the power semiconductor devices. In this study, we propose a 1-D hopping conduction model via the threading dislocations in the p-n diodes. We will give a talk about the derivation of the model and show the correspondence with our results given by a first-principles calculation. We also show the numerical results using the model and discuss the details by comparing with the experimental results.