[13p-A302-1~10] 15.4 III-V-group nitride crystals

△ [13p-A302-2] Electoronic Structure Analysis of a Complex of Screw Dislocation, Mg and H Impurities in GaN

〇Naoki Inoue¹, Takashi Nakano², Yosuke Harashima³, Masaaki Araidai^3,2, Kenji Shiraishi^3,2, Atsushi Oshiyama³ (1.Nagoya Univ., 2.Graduate School of Eng,Nagoya Univ., 3.IMASS,Nagoya Univ.)

Keywords:semiconductor, Gallium Nitride, dislocation

For practical use of GaN power devices, suppression of leakage current is an important issue. In this study, we perform first-principles calculation to the electronic structure of a complex of screw dislocation and Mg and H impurities, which is pointed out as a cause of leakage current. It revealed that a complex of screw dislocation and Mg and H impurities was formed. In addition, it was found that the complex may reduce the n-type tendency of the complex containing only screw dislocation and Mg impurities and suppress the occurrence of leakage current.