[13p-PA8-1~20] 6.2 Carbon-based thin films

[13p-PA8-17] Development of High Performance Narrow-gap Si-added a-C Semiconductors by Control of its phase Structure

〇Kensuke Honda², Akari Matsumoto¹, Bunta Kondo¹, Hiroshi Naragino² (1.Fac. Sci., Yamaguchi Univ., 2.Grad. sch. Sci. Technol. Innov., Yamaguchi Univ.)

Keywords:amorphous carbon, semiconductor, hetero juntion solar cell

The object of this study is to develop high performence narrow gap Si-added amorphous carbon semiconductor that can be applyed for electronic devices. Hetero junction solar cells that were fabricated from optical gap controllable Si-added a-C and Si showed high conversion efficiencies. Therefore, the realization of optical gap controllable Si-added amorphous carbon semiconductor with high performance can be achieved.