[13p-PA8-1~20] 6.2 Carbon-based thin films

[13p-PA8-18] Development of Novel Impurity-doping Si-added Amorphous Carbon Semiconductor Thin Films for High-efficiency Solar Cells

〇(B)Bunta Kondo¹, Hiroshi Naragino², Kensuke Honda² (1.Fac.Sci.,Yamaguchi Univ., 2.Grad.Sch.Sci.Technol.Innov.,Yamaguchi Univ.)

Keywords:amorphous carbon, semiconductor thin film, impurity doping

In order to realize the high-efficiency multi-junction solar cell, we tried to fabricate heterojunction solar cells comprising N-doped n-type Si-added amorphous carbon (a-C) and p-Si. In this study, the impurity-doped Si-added a-C semiconductor films were fabricated by using phosphorus, sulfur and bismuth atoms to enhance the conversion efficiency (short-circuit current density) of solar cells. The conversion efficiency and short-circuit current density of S-doped Si-added a-C/p-Si solar cells could be enhanced compared to that of N-doped Si-added a-C/p-Si solar cells.