[13p-PA8-1~20] 6.2 Carbon-based thin films

[13p-PA8-19] Enhancement of Solar Cell Performance of p-Type Boron-doped Silicon-added Amorphous Carbon/n-Si Heterojunction by Controlling Discharge Frequency

〇Hiroshi Naragino¹, Bunta Kondo², Kensuke Honda¹ (1.Grad. Sch. Sci. Technol. Innov., Yamaguchi Univ, 2.Fac. Sci., Yamaguchi Univ.)

Keywords:amorphous carbon, heterojunction, solar cell

Heterojunction solar cells comrprising p-type boron-doped Si-added amorphous carbon (a-Si_xC_1-x) semiconductor thin film with optical gap controllable (1.25-2.76 eV) and n-Si substrate were fabricated by plasma-enhanced CVD. The conversion efficiency of solar cells was drastically increased with increasing dasicharge frequency.