[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

[13p-PA9-12] Electrical characteristics of Oxygen implanted GaN layers

〇Yuta Fukushima¹, Ryo Tanaka¹, Takuro Inamoto¹, Katsunori Ueno¹, Shinya Takashima¹ (1.Fuji Electric)

Keywords:gallium nitride, MOSFET, Ion-implantation

In order to reduce JFET resistance of vertical GaN planar gate MOSFETs, n-type carrier density needs to be increased by n-type ion implantation. In this report, we investigated oxygen ion implantation as n-type dopant. Electrical properties were evaluated by forming SBD.
The sample annealed at 1100 °C showed significantly higher on-resistance than un-implanted SBD, indicating the activation of oxygen was not enough.
On the other hand, the sample annealed at 1300 °C showed higher donor density than un-implanted epitaxial layer and activation ratio of around 30%.