[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-1] Growth of GaN Film on ScAlMgO₄ Substrate by RF-MBE

〇Seiya Kayamoto¹, Takashi Fujii^1,2, Tsuguo Fukuda², Yuuji Siraishi², Shinichiro Mouri¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal Lab.)

Keywords:Gallium Nitride, ScAlMgO4, RF-MBE

ScAlMgO₄ (SAM) is lattice mismatch of 1.8% to GaN, and difference in thermal expansion coefficient is small to GaN. Also, we obtain SAM crystal with no dislocation. Therefore, this substrate is expected dislocation reduction. However, the surface of SAM substrate coarsen under high temperature, like MOCVD and HVPE has been reported. This study, we measured GaN film growth on SAM substrate with dislocation using Radio-Frequency Molecule Beam Epitaxy (RF-MBE) that is possible low temperature growth under high vacuum, and review optimization of growth condition. Growth temperature was 650℃, and Gallium and Nitrogen were supplied at the same time. We confirmed GaN film growth on SAM substrate under low temperature condition.