[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-7] Microstructural characterization of RF-MBE grown InN on high-quality AlN template (II)

〇Hidenori Tachibana¹, Yusuke Takabayashi¹, Ryosuke Nakamura¹, Shinichiro Mori¹, Yasushi Nanishi¹, Tsutomu Araki¹, Kanako Shojiki², Hideto Miyake^2,3 (1.Ritsumeikan Univ., 2.Grad. School of Eng, Mie Univ., 3.Grad School of RIS, Mie Univ.)

Keywords:InN

InN is an attractive material for long wavelength optical devices and high frequency electronic devices. However, Since there is no lattice-matched substrate for InN, density of threading dislocation in InN films grown hetero epitaxially on foreign substrates (e.g. GaN template and sapphire) is very high. Our group aimed to reduce the threading dislocation density in InN film using a high quality AlN template. In this presentation, we will be discussed the dislocations in the InN layer and the microstructure of the InN / AlN interface.