[13p-PB1-1~29] 15.4 III-V-group nitride crystals

[13p-PB1-8] Growth of N-polar InN by RF-MBE on N-polar AlN Template

〇Anri Fukuda¹, Shinichiro Mori¹, Yasushi Nanishi¹, Araki Tsutomu¹, Kanako Shojiki², Hideto Miyake^2,3 (1.Ritsumeikan Univ., 2.Grad. School of Eng, Mie Univ., 3.Grad School of RIS, Mie Univ.)

Keywords:InN

InN has the smallest effective mass and the highest electron drift velocity. Therefore, InN is expected to be the high-speed and high-frequency electron devices.
However, it is difficult to grow at high temperature due to high equilibrium vapor pressure of nitrogen molecules.
On the other hand, it has been reported that in N-polar InN growth temperature about 100 ° C higher than In-polar InN.
In this presentation, we will be discussed the crystal properties and Electrical characteristics of N-polar InN /N-polar AlN.