The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-A302-1~13] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 9:00 AM - 12:30 PM A302 (6-302)

Tsutomu Araki(Ritsumeikan Univ.), Yusuke Hayashi(Mie Univ.)

9:00 AM - 9:15 AM

[14a-A302-1] MOCVD growth of high-density (2.0 × 1011 cm-2) GaN quantum dots on sapphire substrates

〇Munetaka Arita1, Yasuhiko Arakawa1 (1.NanoQuine, Univ. of Tokyo)

Keywords:quantum dots, MOCVD, GaN

High-density (2.0 × 1011 cm-2) GaN/AlN quantum dots are successfully grown on sapphire substrates by MOCVD. Density distribution of the quantum dots, closely related to materials supply rate distribution, is utilized to efficiently optimize the growth conditions.