The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-A302-1~13] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 9:00 AM - 12:30 PM A302 (6-302)

Tsutomu Araki(Ritsumeikan Univ.), Yusuke Hayashi(Mie Univ.)

10:45 AM - 11:00 AM

[14a-A302-7] High quality AlN film on sapphire prepared by two step sputtering-annealing

Ding Wang1, Kenjiro Uesugi2, Shiyu Xiao1, Yuta Tezen2, Kenji Norimatsu2, Kanako Shojiki3, Shigeyuki Kuboya2, Hideto Miyake1,3 (1.Grad. School of RIS, Mie Univ., 2.SPORR, Mie Univ., 3.Grad. School of Eng., Mie Univ.)

Keywords:AlN substrate, High quality, UV-LED

High quality AlN/sapphire templates are realized using a two step sputtering-annealing technique. Adopting a second sputter-annealing on top of a sputter-annealing prepared AlN thin film, the AlN layer is able to undergo a longer annealing time with flat post-annealing surface, resulting in a total dislocation density of 3.7×107 cm-2 measured by X-ray diffraction. The high-quality AlN templates are expected to breed high-performance nitride-based UV-LEDs and electronic devices.