[14a-D221-1~12] 6.2 Carbon-based thin films

[14a-D221-5] Crystalline quality of heteroepitaxial diamond substrates and their schottky barrier diode characteristics

〇Shinya Ohmagari¹, Atsushi Kobayashi¹, Nobuteru Tsubouchi¹, Hideaki Yamada¹ (1.AIST)

Keywords:diamond, heteroepitaxial, diode

SBD characteristics of heteroepitaxial diamond films have been reported. At room temperature, a high rectification ratio of more than 10⁸ has been confirmed, but the non-uniformity in the crystal plane is large and the device characteristics vary widely. We have developed a metal-assisted termination (MAT) that improves the crystallinity by intentionally incorporating metal atoms during CVD growth. In this study, SBD characteristics before/after insertion of the MAT buffer layer was investigated.