The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[14a-D419-1~12] 6.1 Ferroelectric thin films

Sat. Mar 14, 2020 9:00 AM - 12:15 PM D419 (11-419)

Hiroshi Uchida(Sophia Univ.), Takeshi Kawae(Kanazawa Univ)

10:30 AM - 10:45 AM

[14a-D419-6] Effect of deposition condition on the ferroelectric properties of (Al1-xScx)N thin films.

〇(M1)Shinnosuke Yasuoka1, Takao Shimizu1,2, Masato Uehara3, Hiroshi Funakubo1 (1.Tokyo tech, 2.NIMS, 3.AIST)

Keywords:ferroelectric, thin film, nitride

(Al1-xScx)N, which is a solid solution of Sc of Group Ⅲ element in AlN, was reported to have ferroelectricity in 2019. Its properties are good and are attracting attention. In this study, an ultra-thin film of (Al1-xScx)N was prepared by a dual source reactive RF magnetron sputtering. Deposition films were evaluated for crystal structure and ferroelectric properties.