[14a-PA2-1~18] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [14a-PA2-15] Controlling of interfacial intermixing of Ge/Si core-shell nanowires by thermal annealing

Xiaolong Zhang^1,2、〇Wipakorn Jevasuwan¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. Tsukuba)

キーワード：Nanowire, intermixing, annealing

One-dimensional nanostructures, Ge/Si core-shell NWs, have attracted considerable attention in the last decades. Many efforts have been done to optimize structures, selective doping, carriers’ s concentration, and interface properties to be able to use NWs for nanodevices. However, the formation of a sharp interface and good crystallinity for the i-Ge/p-Si core-shell structure have not yet been optimized to enhance hole carrier accumulation. In this study, the thermal annealing effects on i-Ge/p-Si core-shell NWs were investigated. The morphology, intermixing at the interface between the i-Ge core and p-Si shell layers, and crystallinity of the core-shell NWs were analyzed by controlling the annealing parameters.