The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14p-A302-1~18] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)

Makoto Saito(Tohoku Univ.), Hisashi Murakami(TUAT), Shugo Nitta(Nagoya Univ.)

4:15 PM - 4:30 PM

△ [14p-A302-10] Halide vapor phase epitaxial growth of Mg-doped GaN layers using MgO

〇Kazuki Ohnishi1, Yuki Amano1, Naoki Fujimoto2, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

Keywords:HVPE, GaN