[14p-A302-1~18] 15.4 III-V-group nitride crystals

[14p-A302-14] Study of surface contamination on single-crystalline GaN layer (Ⅳ)

〇Ai Mizuno¹, Naoki Fukuda¹, Masaki Iwamoto¹, Takuya Osada¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

Keywords:GaN layer, XPS, surface contamination

Our group has demonstrated the GaN surface contamination focused on Si-based compounds contained in air. In this work, we examined the difference in quantity of the Si contamination using X-ray photoelectron spectroscopy (XPS) on GaN layers grown under various conditions.