The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14p-A302-1~18] 15.4 III-V-group nitride crystals

Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)

Makoto Saito(Tohoku Univ.), Hisashi Murakami(TUAT), Shugo Nitta(Nagoya Univ.)

6:30 PM - 6:45 PM

[14p-A302-18] GaN Etching to Maintain Surface Flatness Required for Surface Activated Bonding

〇(B)Naoki Yokoyama1, Ryo Tanabe1, Takaya Morikawa1, Yasufumi Fujiwara1, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.Osaka Univ.)

Keywords:surface activated bonding