[14p-A305-1~14] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [14p-A305-2] The low temperature fabrication of gate-first Schottky barrier pMOSFET with PdErSi source and drain

〇RengieMark Domincel Mailig¹、Yuichiro Aruga¹、Min Gee Kim¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech)

キーワード：PdErSi, SB MOSFET, gate-first process

The main requirement for the integration of the high-k gate insulators such as HfN or HfO₂ in the gate-first CMOS fabrication is the low-thermal budget process below 500°C. In this work, the PdErSi as S/D material in the gate-first SB p- channel MOSFET (pMOSFET) was investigated.