[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

[14p-B401-10] Characterization of GaN-on-Diamond HEMT fabricated by surface activated bonding

〇Yuki Takiguchi¹, Shuichi Hiza¹, Masahiro Fujikawa¹, Kunihiko Nishimura¹, Eiji Yagyu¹, Takashi Matsumae², Yuichi Kurashima², Hideki Takagi², Mikio Yamamuka¹ (1.Mitsubishi Electric, 2.AIST)

Keywords:GaN, HEMT, diamond

For the reduction of a channel temperature of GaN-HEMT during operation, a GaN-HEMT on a diamond substrate have been reported. In this study, the GaN-on-diamond HEMT fabricated by surface activated bonding (SAB) is characterized by electrical and temperature measurements. The obtained results are compared with that of a conventional GaN-on-Si HEMT and a GaN-on-SiC HEMT by SAB method.