[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

[14p-B401-9] Carrier transport characteristics depending on AlN spacer layer thickness on InAlN/GaN heterostructure

〇Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Shinya Nunoue³, Hajime Nago³, Ichiro Mizushima^1,2, Takashi Yoda^1,2, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech., 2.NuFlare Technology Inc., 3.Toshiba Corp.)

Keywords:InAlN/GaN, AlN spacer layer, 2DEG