Influence of PDA ambient gas on characteristics of n-β-Ga2O3/Al2O3/Pt MOS capacitors

Masafumi Hirose; Toshihide Nabatame; Erika Maeda; Akihiko Ohi; Naoki Ikeda; Yoshihiro Irokowa; Yasuo Koide; Hajime Kiyono

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Tetsuya Suemitsu(Tohoku Univ.), Taketomo Sato(Hokkaido Univ.)

5:15 PM - 5:30 PM

△ [14p-B401-14] Influence of PDA ambient gas on characteristics of n-β-Ga₂O₃/Al₂O₃/Pt MOS capacitors

〇(M1)Masafumi Hirose^1,2, Toshihide Nabatame², Erika Maeda^1,2, Akihiko Ohi², Naoki Ikeda², Yoshihiro Irokowa², Yasuo Koide², Hajime Kiyono¹ (1.SIT, 2.NIMS)

Keywords:Ga2O3, Al2O3, PDA

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Presentation information

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

△ [14p-B401-14] Influence of PDA ambient gas on characteristics of n-β-Ga2O3/Al2O3/Pt MOS capacitors

△ [14p-B401-14] Influence of PDA ambient gas on characteristics of n-β-Ga₂O₃/Al₂O₃/Pt MOS capacitors