The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Tetsuya Suemitsu(Tohoku Univ.), Taketomo Sato(Hokkaido Univ.)

6:00 PM - 6:15 PM

[14p-B401-17] Vertical-type 2DHG Diamond MOSFET Realization of large current operation (-3.4 A) for power device applications

〇(B)Naoya Niikura1, Masayuki Iwataki1, Jun Nishimura1, Kiyotaka Horikawa1, Shotaro Amano1, Atsushi Hiraiwa1, Hiroshi Kawarada1,2 (1.Waseda Univ, 2.Zaiken)

Keywords:diamond, vertical, FET

We have fabricated a vertical 2DHG diamond MOSFET using two-dimensional hole gas (2DHG) and reported high current operation (drain current IDS = -1.6 A {@gate width WG = 20 mm}). In this research, to realize further high-current operation for application to the complementary inverter, a coupled device with a device WG increased to 100 mm and its current characteristics were evaluated. As a result, a large current operation of IDS = -3.4 A was realized.