[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

△ [14p-B401-17] Vertical-type 2DHG Diamond MOSFET Realization of large current operation (-3.4 A) for power device applications

〇(B)Naoya Niikura¹, Masayuki Iwataki¹, Jun Nishimura¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ, 2.Zaiken)

Keywords:diamond, vertical, FET

We have fabricated a vertical 2DHG diamond MOSFET using two-dimensional hole gas (2DHG) and reported high current operation (drain current I_DS = -1.6 A {@gate width W_G = 20 mm}). In this research, to realize further high-current operation for application to the complementary inverter, a coupled device with a device W_G increased to 100 mm and its current characteristics were evaluated. As a result, a large current operation of I_DS = -3.4 A was realized.