[14p-D305-1~8] Progresses and future on EUV and soft x-ray imaging techniques

[14p-D305-7] CMOS Image Sensor Development for Soft X-ray and EUV Application

〇Nobukazu Teranishi^1,2, Tetsuo Harada¹, Takeo Watanabe¹, Quan Zhou³, Masatoshi Kimura³, Jan Bogaerts³, Xinyang Wang³ (1.LASTi, U. of Hyogo, 2.RIE, Shizuoka Univ., 3.Gpixel Inc.)

Keywords:image sensor, soft X-ray, EUV

We develop a high-quantum-efficiency, high-exposure-durability backside-illuminated CMOS image sensor for soft-X-ray detection. The pixel size is 11 μm and pixel number is 2048 x 2048. The backside fabrication process is optimized to reduce the dead-layer thickness, and the Si-layer thickness is chosen as 9.5 μm to reduce radiation damage. Our sensor demonstrates a high quantum efficiency of >90 % in the photon-energy range of 80–1,000 eV. Further, its EUV-regime efficiency is ~100 % because the dead-layer thickness is only 5 nm. The readout noise is as low as 2.5 e⁻ rms and the frame rate as high as 48 fps, which makes the device practical for general soft X-ray experiments.