11:30 AM - 11:45 AM
▲ [15a-A305-10] Characteristics of slow traps in Al2O3/GeOx/n-Ge MOS interfaces by plasma oxidation
Keywords:Ge, MOS interfaces
One of the key technologies for realizing Ge CMOS is the formation of gate stacks with low defect densities. In order to reduce fast interface states, (HfO2)/Al2O3/GeOx/Ge interfaces realized by post plasma oxidation (Post-PO) are promising. However, a remaining critical issue is the existence of a large amount of slow traps, which can be an inherent problem for Ge gate stacks.In this study, we examine the physical meaning of the present hysteresis measurement for slow electron traps in n-Ge MOS interfaces.