[15a-A305-1~13] 13.3 絶縁膜技術

▲ [15a-A305-10] Characteristics of slow traps in Al₂O₃/GeO_x/n-Ge MOS interfaces by plasma oxidation

〇Mengnan Ke¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. Tokyo)

キーワード：Ge, MOS interfaces

One of the key technologies for realizing Ge CMOS is the formation of gate stacks with low defect densities. In order to reduce fast interface states, (HfO₂)/Al₂O₃/GeO_x/Ge interfaces realized by post plasma oxidation (Post-PO) are promising. However, a remaining critical issue is the existence of a large amount of slow traps, which can be an inherent problem for Ge gate stacks.In this study, we examine the physical meaning of the present hysteresis measurement for slow electron traps in n-Ge MOS interfaces.