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△ [15a-A305-8] Correlation between the temperature dependence of Al2O3/SiO2 interface dipole layer strength with the density of oxides
Keywords:Interface dipole layer
It is important to control operation temperature dependence of hetero-oxides interface dipole layer strength for the devices used in wide range of temperature. We investigated the correlation between the temperature dependence of interface dipole layer strength with the film quality of oxides. It was suggested that positive temperature coefficient of Al2O3/SiO2 interface dipole layer strength was pronounced only when both oxides had lower density. It was also indicated that the chemical states and mixing of Si and Al atoms near the interface had little effect on operation temperature dependence of the dipole layer strength.