The 67th JSAP Spring Meeting 2020

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Mitsuru Sometani(AIST), Munetaka Noguchi(Mitsubishi Electric)

3:45 PM - 4:00 PM

△ [15p-A201-11] Consideration on the impact of O2 partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics

〇Jun Koyanagi1, Koji Kita1 (1.The Univ. of Tokyo)

Keywords:MOS interface