3:45 PM - 4:00 PM
△ [15p-A201-11] Consideration on the impact of O2 partial pressure and temperature of wet POA processes on p-type 4H-SiC (0001) MOS interface characteristics
Keywords:MOS interface
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)
Mitsuru Sometani(AIST), Munetaka Noguchi(Mitsubishi Electric)
3:45 PM - 4:00 PM
Keywords:MOS interface