[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-8] Temperature Dependence of Inversion Layer Mobility of the Si-face SiC MOSFET Fabricated on Low Acceptor Concentration P-type Well Region

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

Keywords:inversion layer, mobility, SiC