[15p-D215-1~11] 7.3 Micro/Nano patterning and fabrication

[15p-D215-6] Defects of UV-nanoimprinted Patterns Induced by Sequential Infiltration Synthesis and
Defect Reduction by Adding a Cross-Linking Agent

〇Chiaki Miyajima¹, Shunya Ito¹, Takahiro Nakamura¹, Masaru Nakagawa¹ (1.IMRAM, Tohoku Univ.)

Keywords:UV-nanoimprintig, sequential infiltration synthesis (SIS), cross-linking agent

Sequential infiltration synthesis (SIS) is the method to fabricate organic/inorganic hybrid structures in polymer matrices and films. Our group reported that SIS using trimethylalminium (TMA) as an inorganic precursor improved etching resistance of resist thin films for UV nanoimprinting. The purpose of this study is to improve morphological stability of UV-nanoimprinted line patterns under the SIS treatment. Collapse defects of 45-nm-width convex lines after 5-cycles SIS were suppressed by adding a cross-linking agent showing small gas absorption of trans-1,3,3,3-tetrafluoropropene (TFP).