3:15 PM - 3:30 PM [10p-N102-7] Fabrication of AlN/AlGaN HEMTs with n+-GaN regrowth ohmic contacts by sputtering 〇Ryota Maeda1, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1 (1.IIS, Utokyo)