Takahiro Sawada

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Speaker, Author, Co-Author

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM

[11a-N305-11] Reacive Etching of InGaN with HI Neutral-Beam Etching

〇(M2)Takahiro Sawada¹, Takahiro Ishihara¹, Daisuke Ohori¹, XueLun Wang^3,4, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST, 4.IMaSS, Nagoya Univ.)

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