Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N305 (Oral)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N305-1] [Young Scientist Presentation Award Speech] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Yuto Ando², Manato Deki⁴, Emi Kano², Shugo Nitta², Yoshio Honda², Nobuyuki Ikarashi², Atsushi Tanaka^2,3, Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

9:15 AM - 9:30 AM

[11a-N305-2] Evaluation of activation for p-type GaN by channeled implantation

〇Atsushi Suyama¹, Hitoshi Kawanowa¹, Hideaki Minagawa¹, Masahiko Aoki¹ (1.Ion Technology Center Co., Ltd)

9:30 AM - 9:45 AM

[11a-N305-3] Study of Mg activation process in Mg-implanted GaN by means of positron annihilation

〇Akira Uedono¹, R. Tanaka², S. Takashima², K. Ueno², M. Edo², K. Shima³, K. Kojima³, S.F. Chichibu³, S. Ishibashi⁴ (1.Univ. of Tsukuba, 2.Fuji Electric, 3.IMRAM-Tohoku Univ., 4.AIST)

9:45 AM - 10:00 AM

△ [11a-N305-4] Spatially resolved CL of p-type ion-implanted GaN using vacancy-guided Mg diffusion

〇Kohei Shima¹, Ryo Tanaka², Shinya Takashima², Katsunori Ueno², Masaharu Edo², Kazunobu Kojima¹, Akira Uedono³, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Univ. of Tsukuba)

10:00 AM - 10:15 AM

[11a-N305-5] Evaluation of acceptor activation rate of Mg/N-ion-implanted GaN annealed at 1400°C under normal pressure

〇Masato Omori¹, Kenta Watanabe², Taisei Miyazaki¹, Maito Shiraishi¹, Ryusei Wada¹, Takashi Okawa² (1.Oita Univ., 2.MIRISE Technologies)

10:15 AM - 10:30 AM

[11a-N305-6] PL characteristics of electron-irradiated and Mg/N-ion-implanted GaN

〇Maito Shiraishi¹, Taisei Miyazaki¹, Ryusui Wada¹, Kenta Watanabe², Takashi Okawa², Masato Omori¹ (1.Oita Univ., 2.MIRISE Technologies)

10:45 AM - 11:00 AM

△ [11a-N305-7] Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

11:00 AM - 11:15 AM

[11a-N305-8] Investigation of process damage on GaN surface by using PL and XPS

〇Takumi Yonemura¹, Yoshihiro Saito¹ (1.Sumitomo Electric)

11:15 AM - 11:30 AM

[11a-N305-9] Dynamic observation of oxidation on GaN surface by real-time XPS under irradiating oxidation gas

〇Masatomo Sumiya¹, Yasutaka Tsuda², Tetsuya Sakamoto², Masato Sumita³, Liwen Sang¹, Yoshitomo Harada¹, Aki Tominaga², Akitaka Yoshigoe² (1.NIMS, 2.JAEA, 3.KIKEN AIP)

11:30 AM - 11:45 AM

[11a-N305-10] Suraface morphology of Si-doped GaN sputtered layer on N-polar GaN substrate

〇Shinji Yamada¹, Masanori Shirai², Hiroki Kobayashi², Ryuichiro Kamimura², Tetsu Kachi³, Jun Suda^1,3 (1.Nagoya Univ., 2.ULVAC, 3.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM

[11a-N305-11] Reacive Etching of InGaN with HI Neutral-Beam Etching

〇(M2)Takahiro Sawada¹, Takahiro Ishihara¹, Daisuke Ohori¹, XueLun Wang^3,4, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST, 4.IMaSS, Nagoya Univ.)

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