Masato Omori

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Speaker, Author, Co-Author

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM

[11a-N305-5] Evaluation of acceptor activation rate of Mg/N-ion-implanted GaN annealed at 1400°C under normal pressure

〇Masato Omori¹, Kenta Watanabe², Taisei Miyazaki¹, Maito Shiraishi¹, Ryusei Wada¹, Takashi Okawa² (1.Oita Univ., 2.MIRISE Technologies)