Maito Shiraishi

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Speaker, Author, Co-Author

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM

[11a-N305-6] PL characteristics of electron-irradiated and Mg/N-ion-implanted GaN

〇Maito Shiraishi¹, Taisei Miyazaki¹, Ryusui Wada¹, Kenta Watanabe², Takashi Okawa², Masato Omori¹ (1.Oita Univ., 2.MIRISE Technologies)